We present a side-by-side comparison of the nonlinear behavior of four passive AlGaAs ridge waveguides where the bandgap energy of the core layers ranges from 1.60 to 1.79 eV. By engineering the bandgap to suppress two-photon absorption, minimizing the linear loss, and minimizing the mode area, we achieve efficient wavelength conversion in the C-band via partially degenerate four-wave mixing with a continuous-wave pump. The observed conversion efficiency [Idler(OUT)/Signal(IN)=-6.8  dB] is among the highest reported in passive semiconductor or glass waveguides.

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We report low-loss deep-etch AlGaAs optical waveguides fabricated with nitrogen plasma-assisted photoresist reflow. The simultaneous application of a nitrogen plasma and heat is used to reduce the line edge roughness of patterned photoresist and limit the lateral spread of the photoresist patterns of submicron-scale waveguides. Comparison of the edge roughness of the etched sidewalls between the as-developed and smoothed photoresist etch samples show a reduction of the RMS roughness from 3.39±0.17 nm to 1.39±0.03 nm. The reduction in propagation loss is verified by measured waveguide loss as a function of waveguide widths. A 0.65-μm wide waveguide with a modal area of 0.4 μm(2) is fabricated with a propagation loss as low as 1.20±0.13 dB/cm for the transverse-electric mode.

Enhancements of the continuous-wave four-wave mixing conversion efficiency and bandwidth are accomplished through the application of plasma-assisted photoresist reflow to reduce the sidewall roughness of sub-square-micron-modal area waveguides. Nonlinear AlGaAs optical waveguides with a propagation loss of 0.56 dB/cm demonstrate continuous-wave four-wave mixing conversion efficiency of -7.8 dB. Narrow waveguides that are fabricated with engineered processing produce waveguides with uncoated sidewalls and anti-reflection coatings that show group velocity dispersion of +0.22 ps²/m. Waveguides that are 5-mm long demonstrate broadband four-wave mixing conversion efficiencies with a half-width 3-dB bandwidth of 63.8-nm.

Polarization-insensitive (PI) phase-transmultiplexing (PTM) of a 10-Gb/s return-to-zero ON-OFF keying (RZ-OOK) pump and a 10-Gb/s RZbinary phase-shift keying (RZ-BPSK) probe to 20-Gb/s RZ-quadrature-PSK (RZ-QPSK) has been successfully demonstrated for the first time in a passive, birefringent AlGaAs waveguide, utilizing PI cross-phase modulation (PI-XPM). For differential QPSK (DQPSK)-detection, a 10 − 9-BER pre-amplified receiver sensitivity penalty of ≈ 2.5 dB for the in-phase component and ≈ 4.9 dB for the quadrature component were found. The penalties were relative to the FPGA-precoded RZ-DQPSK baseline for a pump-probe detuning of ≈ 12 nm, when the probe state of polarization was scrambled and the pump was launched off-axis into the waveguide.