Silicon carbide (SiC) films doped with gallium are obtained during the process of epitaxial growth using the sublimation variant “sandwich method” or diffusion. It is determined by neutron activation analysis that the gallium solubility in SiC in the temperature range 1800 to 2400 °C does not exceed 1.2 × 1019 cm−3 at growth on the 〈0001〉 plane of substrate, but is lower at growth on the 〈0001〉 plane and in the mentioned temperature range the solubility changes from 2 × 1018 to 7 × 1018 cm−3. Data obtained correlate with the hole concentration value in these films determined from the analysis of the temperature dependence of Hall‐effect. The thermal activation energy of gallium in SiC defined from the electroconductivity is equal to 0.29 eV. Low‐temperature photoluminescence is investigated of SiC samples doped with gallium and nitrogen with n‐ and p‐type conductivity. The absorption spectra are given of grown crystals stimulated by optical transitions between gallium levels and valence band. It is shown that the parameters of the gallium diffusion in SiC excepting the accessible surface concentration are close to the parameters of aluminium diffusion. The surface concentration of gallium does not exceed 7 × 1017 cm−3 at the diffusion.
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