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Herein, we show that thin films of MAPbI 3 , FAPbI 3 , (CsMA)PbI 3 , and (CsMAFA)PbI 3 , where MA and FA are methylammonium and formamidinium cations, respectively, tolerate ultrahigh doses of γ rays approaching 10 MGy without significant changes in their absorption spectra. However, among the studied materials, FAPbI 3 was the only one that did not form metallic lead due to its extreme radiation hardness. Infrared nearfield optical microscopy revealed the radiation-induced depletion of organic cations from the grains of MAPbI 3 and their accumulation at the grain boundaries, whereas FAPbI 3 on the contrary lost FA cations from the grain boundaries. The multication (CsMAFA)PbI 3 perovskite underwent a facile phase segregation to domains enriched with MA and FA cations, which is a principally new radiation-induced degradation pathway. Our findings suggest that the radiation hardness of the rationally designed perovskite semiconductors could go far beyond the impressive threshold of 10 MGy we set herein for FAPbI 3 films, which opens many exciting opportunities for practical implementation of these materials.

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