In this study, we investigate Pd3-cluster-modified 555–777 graphene (Pd3-graphene) as a novel resistor-type gas sensor to detect SF6 decomposition products based on density functional theory calculations. We obtained and minutely analyzed the relevant parameters of each most stable adsorption configuration to explore the microscopic mechanism during gas adsorption. Theoretical results reveal that Pd3-graphene shows great adsorption capacity and sensitivity toward those decompositions. High adsorption energies and abundant charge transfer amounts could guarantee a stable adsorption structure of decomposition gases on Pd3-graphene surface. The complex change of density of states verifies a strong chemical reaction between the gases and the surface. Moreover, the conductivity of Pd3-graphene would improve due to the decrease of energy gap, and the sensitivity was calculated as SOF2 > H2S > SO2 > SO2 F2. This work provides an effective method to evaluate the operation status of SF6 gas-insulated equipment.
A novel overvoltage driver is proposed to speed up the turn-on transition of series-connected MOSFETs module which serves as the main switch in high voltage pulse generator. In order to realize the overvoltage driver, a nanosecond pulse with the amplitude of hundreds of volts is superposed on a square driving signal by linear transformer driver scheme. The results show that, comparing to the commercial high current driver, the turn-on time of a 10kV MOSFETs module including ten devices with the proposed driving scheme can be shortened from ∼25ns to ∼7ns. The proposed overvoltage driver can be used to conveniently modulate the rise time and pulse width of high voltage nanosecond pulse generator constructed by MOSFETs. In addition, it is demonstrated that there is almost no influence of the overvoltage driver on the gate-source characteristics of device by analyzing the variation of C-f curves of input capacitances.
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