The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50° and that for the surface emission was 54.1 K for 0°. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 µm, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.
In this study, stacked graphene diodes were fabricated via direct bonding using single-crystal graphene on a SiC substrate. Switching and S-shaped negative resistance were observed in the junction electrical properties measured via the 4-terminal configuration. The high-resistance state switched to the low-resistance state after applying a maximum junction voltage of ~10 V. In the high-bias voltage region, the junction voltage decreased from the maximum junction voltage to a few volts, indicating a negative resistance. In the high-resistance state, junction conductance was nearly constant at 0.13 mS. Electrical conductance in the high-bias region was expressed using an exponential function with an exponent of −1.26. Therefore, the fabricated stacked graphene diode with a simple device structure demonstrated strong nonlinear electrical properties with negative differential conductance.
The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50° and that for the surface emission was 54.1 K for 0°. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 µm, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.