Soft magnetization of FeCoV thin films has been examined experimentally. The coercive force of FeCoV films decreases by more than 90% with little reduction in saturation magnetization or changes in magnetization behavior when films are sandwiched between two thin FeNiMo soft-magnetic layers making up about 2% of the total volume. It can be assumed that a magnetic wall, parallel to the film surface and formed at the interface between the soft-magnetic layer and the FeCoV layer, will readily propagate into the FeCoV layer. The thickness of the soft-magnetic layer necessary for the magnetic wall formation is thought to be about 50 100 Å. The reduction in coercive force seems to be related to the anisotropy of the magnetic properties of the thin soft-magnetic layer. In the case of Fe films, however, a reduction in coercive force due to the thin soft-magnetic layer never occurs. Whether the thin soft-magnetic layer has effects on the crystal structure of FeCoV or Fe layers, will be examined experimentally in the future.
Electrical properties of the C60(OH)10/Au contact have been studied by measuring its current-voltage characteristics in the temperature range of 300–500 K. The Schottky barrier of the C60(OH)10/Au contact was confirmed to be 0.70±0.02 eV from Arrhenius plots of the current-voltage characteristics measured at various bias voltages as well as various preparation conditions of the C60(OH)10 material. Significant effect of the applied electric field on the barrier height has not been observed in the range of 0.1–2.0 MVm−1. The effects of both the charge transfer from C60 cage to OH groups and the crystallinity of the C60(OH)10 material on the Schottky barrier were discussed on the basis of x-ray photoemission spectroscopy and x-ray diffraction analyses.
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