The artificial photosynthesis technology known as the Honda-Fujishima effect, which produces oxygen and hydrogen or organic energy from sunlight, water, and carbon dioxide, is an effective energy and environmental technology. The key component for the higher efficiency of this reaction system is the anode electrode, generally composed of a photocatalyst formed on a glass substrate from electrically conductive fluorine-doped tin oxide (FTO). To obtain a highly efficient electrode, a dense film composed of a nanoparticulate visible light responsive photocatalyst that usually has a complicated multi-element composition needs to be deposited and adhered onto the FTO. In this study, we discovered a method for controlling the electronic structure of a film by controlling the aerosol-type nanoparticle deposition (NPD) condition and thereby forming films of materials with a band gap smaller than that of the prepared raw material powder, and we succeeded in extracting a higher current from the anode electrode. As a result, we confirmed that a current approximately 100 times larger than those produced by conventional processes could be obtained using the same material. This effect can be expected not only from the materials discussed (GaN-ZnO) in this paper but also from any photocatalyst, particularly materials of solid solution compositions.
A dense, thick, and organic‐binder‐free ceramic film consisting of stress‐free nanoparticles could be obtained at room temperature by making use of the unstable and high‐surface energy amorphous phase on the surface of particles. Photolithography and wet etching can be adapted to the thick ceramic green‐state film. A multilayered structure consisting of various ceramics with different sintering temperatures and Cu wiring can form on a Cu foil below 1000 °C.
Embedded capacitors can effectively decrease the size of electronic appliances. This application prefers the use of dielectric films with a high dielectric constant prepared by low‐temperature processes. In the present paper, we report the preparation, characterization, and dielectric properties ranging from 10 kHz to 1 MHz of BaTiO3/epoxy and BaTiO3/Al composite films, processed at a low temperature. In the BaTiO3/resin composites, the ceramic content is limited and a maximum dielectric constant of 150 is obtained. A dense composite film of BaTiO3 particles having varying grain sizes and prepared by aerosol deposition showed a maximum dielectric constant of 400. However, BaTiO3/aluminum composite showed a high dielectric constant of >30,000 due to the percolation effect.
In the stress control of an X-ray mask absorber, the repeatability of control and stability are important. We found that the change in the stress in a Ta film resulting from annealing depends on the oxygen concentration in the film; the magnitude of the stress change is determined by the annealing temperature and time. Using this characteristic of Ta film, we have successfully controlled the stress in the Ta absorber to less than 5 MPa with good repeatability. In our mask fabrication process, Al2O3 film was used as an etching mask. We found that the Al2O3 film prevented the Ta absorber stress from changing in high-temperature atmospheres because the Al2O3 film prevented oxygen diffusion into the Ta film. Utilizing Al2O3 films, we succeeded in preventing changes in Ta absorber stress in the thermal processes after Ta stress control, such as frame bonding and resist baking. Consequently, we were able to precisely control the Ta absorber stress in X-ray masks with good repeatability and stability in a realistic X-ray mask fabrication process.
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