Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (
μ
), equivalent oxide thickness (
EOT
), and contact resistance (
R
C
), which enables high ON current (
I
on
) with reduced driving voltage (
V
dd
). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
In the article the spectra of plasmon-polariton in a three-dimensional periodic structure of graphene ribbons embedded in a medium were studied at the first time and for a fixed carrier concentration, influences on the spectra from ribbon width, interface distance and period of ribbon were shown. Compared to those in monolayer periodic structure of graphene ribbons, sharp differences occur. Furthermore, there always exist a match point where frequencies of the plasmon-polarition and the electromagnetic radiation are the same. The study improved our basic knowledge on plasmon dynamics in graphene and was important in the design of high efficiency optoelectronic devices.
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