A well-ordered two-dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self-organized on a Si(110)-16 x 2 surface by the direct-current heating of approximately 1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long-range spatial order and a high integration density over a mesoscopic area, and these two self-ordering crossed arrays of parallel-aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as approximately 2 and approximately 5 nm, respectively. The difference in the conductivities of two crossed-NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self-organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 x 2 domains, which are driven by the electrical field of direct-current heating. Prospects for this Au silicide nanomesh are also discussed.

The frontispiece shows a scanning tunneling microscopy image of a well‐ordered Au silicide nanowire network self‐organized on a 16×2 superstructure of a Si(110) surface by post‐deposition annealing at 1100 K. This nanomesh consists of two crossed arrays of parallel‐aligned Au silicide nanowires with distinctly different sizes and conductivities. The ability to form a perfectly ordered 2D nanomesh on a Si(110) nanotemplate represents a step towards the nanofabrication of integrated 2D crossbar nanocircuits in a very straightforward, fast, cost‐effective, and high‐throughput process. For more information, please read the Full Paper “Two‐Dimensional Self‐Organization of an Ordered Au Silicide Nanowire Network on a Si(110) 16×2 Surface” by I.‐H. Hong et al., beginning .

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A model for crystal growth during metal induced lateral crystallization of amorphous silicon