The field of next‐generation microdisplays is flourishing. Relevant display technologies, such as mini‐light emission diodes (mini‐LEDs), micro‐organic light emission diodes (micro‐OLEDs), and micro‐light emission diodes (micro‐LEDs) are thus in the urgent stage of development. From this perspective, comprehensive and systematical analyzes are conducted for the aforesaid microdisplay configurations. A holistic view of microdisplay technologies is developed with the corresponding performance metrics, providing a path for miscellaneous scenarios. Among these scenarios, the applications in augmented reality (AR), virtual reality (VR), wearable devices, and head‐up displays (HUD) are currently attracting considerable attention for deeper human‐digital interactions. However, there is a multiplicity of obstacles and challenges hindering such development. Nevertheless, recent advances in microdisplay technologies hold tremendous promise for the paradigms of these applications, taking a leap forward for next‐generation microdisplays. This review presents perspectives, relevant materials, and the technology landscape for such ongoing display technologies, offering guidance on the design of advanced microdisplays.

The adsorption and desorption of electrolyte ions strongly modulates the carrier density or carrier type on the surface of monolayer-MoS2 catalyst during the hydrogen evolution reaction (HER). The buildup of electrolyte ions onto the surface of monolayer MoS2 during the HER may also result in the formation of excitons and trions, similar to those observed in gate-controlled field-effect transistor devices. Using the distinct carrier relaxation dynamics of excitons and trions of monolayer MoS2 as sensitive descriptors, an in situ microcell-based scanning time-resolved liquid cell microscope is set up to simultaneously measure the bias-dependent exciton/trion dynamics and spatially map the catalytic activity of monolayer MoS2 during the HER. This operando probing technique used to monitor the interplay between exciton/trion dynamics and electrocatalytic activity for two-dimensional transition metal dichalcogenides provides an excellent platform to investigate the local carrier behaviors at the atomic layer/liquid electrolyte interfaces during electrocatalytic reaction.

Although microscopic techniques have been used to characterize transition metal dichalcogenides (TMDs), direct observation of charge carrier dynamics distribution in TMDs with diverse shapes remains unexplored. Herein, ultrafast pump–probe microscopy (UPPM) is employed to reveal the carrier dynamics distribution in molybdenum disulfide (MoS2) and tungsten disulfide (WS2) monolayer of four shapes: triangular (t‐MoS2), curved triangular (c‐MoS2), triangular (t‐WS2), and hexagonal (h‐WS2). Monitoring the photon transmission T at 1.55 eV after pumping with a photon energy of 3.1 eV, a negative ΔT/T occurs in t‐MoS2 and c‐MoS2, while a positive ΔT/T is detected in t‐WS2 and h‐WS2 after 3–7 ps time evolution. This distinctive behavior is attributed to deep/shallow defects below the conduction band minimum (CBM) in MoS2 and WS2. Spatial‐independent ΔT/T is observed in t‐MoS2 and t‐WS2, while the ΔT/T in c‐MoS2 has a rapid decay of photoexcited carriers at the vertices and curved edges. Additionally, a threefold symmetry of ΔT/T is revealed in h‐WS2, attributed to the dissimilar occupation of defect states near the h‐WS2 CBM. This work paves the way for examining charge carrier dynamics of various shapes of TMDs and provides a unique microscopic method for studying the charge carrier dynamics in emerging TMDs heterostructures.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.