In this work, microscopic three-dimensional simulations were performed on nanowire array solar cells to study the impact of surface recombination (SR) on the photovoltaic performance. Both axially and radially arranged p-n junction in III-V-based structures were taken into consideration. From the cases with SR velocity varying from 1e3 cm∕s to 1e6 cm∕s, the radial p-n-junction nanowire was found to provide better tolerance for SR. The SR difference within the axial and radial p-n-junction structures is explained by analyzing the relevant minority carrier density, followed by a discussion on the impact of SR on the diffusive nature of minority carriers.

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Electrodynamical model of a classical distributed Bragg reflector (DBR) consisting of alternating quarter-wave layers of high and low permittivity is considered at the plane wave normal incidence. Reflective characteristics of DBR possessing absorption loss in constituting layers are analysed via correct wavelength-scale boundary problem solution by the method of single expression (MSE). Analysis of optical field and power flow density distributions within the lossy DBR structures explained the peculiarities of their reflective characteristics. Optimal configurations of lossless and lossy DBRs are revealed. Specific DBR structures possessing full transparency at definite number of layers are also analysed.