Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent light sources with a small footprint. Recent studies in this field have triggered a vivid debate on how to prove and interpret lasing in the high-β regime. We investigate close-to-ideal spontaneous emission coupling in GaN nanobeam lasers grown on silicon. Such nanobeam cavities allow for efficient funneling of spontaneous emission from the quantum well gain material into the laser mode. By performing a comprehensive optical and quantum-optical characterization, supported by microscopic modeling of the nanolasers, we identify high-β lasing at room temperature and show a lasing transition in the absence of a threshold nonlinearity at 156 K. This peculiar characteristic is explained in terms of a temperature and excitation power-dependent interplay between zero-dimensional and two-dimensional gain contributions.
Nanolasers operate with a minimal amount of active material and low losses. In this regime, single layers of transition-metal dichalcogenides (TMDs) are being investigated as next generation gain materials due to their high quantum efficiency. We provide results from microscopic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with four commonly used TMD semiconductors. Our approach includes band-structure renormalizations due to excited carriers that trigger a direct-to-indirect band-gap transition. As a consequence, we predict a rollover for the gain that limits the excitation regime where laser operation is possible. A parametrization of the peak gain is provided that is used in combination with a rate-equation theory to discuss consequences for experimentally accessible laser characteristics.
The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output characteristics. Such nanoscale lasers have initiated a discourse on the origin of the physical mechanisms involved and their boundaries, such as the required photon number, the importance of optimized light confinement in a resonator, and mode-density enhancement. Here, high-metal-clad coaxial nanolasers, which facilitate thresholdless lasing are investigated. Both the conventional lasing characteristics, as well as the photon statistics of the emitted light at 10 K under continuous wave excitation are experimentally and theoretically investigated. While the former lacks adequate information to determine the threshold to coherent radiation, the latter reveals a finite threshold pump power. The work confirms an important aspect of high-lasers, namely that a thresholdless laser does have a finite threshold pump power and must not be confused with a hypothetical zero-threshold laser. Moreover, the results reveal an excitation power dependent-factor which needs to be taken into account to correctly describe the experimental data. The properties and the terminology of thresholdless lasing have accompanied the development of laser physics in the last decades. More recently, the realization of nanoscale devices
The realization of high-β lasers is one of the prime applications of cavity-QED promising ultra-low thresholds, integrability and reduced power consumption in the field of green photonics. In such nanolasers spontaneous emission can play a central role even above the threshold. By going beyond rate-equation approaches, we revisit the definition of a laser threshold in terms of the input-output characteristics and the degree of coherence of the emission. We demonstrate that there are new regimes of cavity-QED lasing, realized e.g. in high-Q nanolasers with extended gain material, for which the two can differ significantly such that coherence is reached at much higher pump powers than required to observe the thresholdlike intensity jump. Against the common perception, such devices do not benefit from high-β factors in terms of power reduction, as a significant amount of stimulated emission is required to quieten the spontaneous emission noise. arXiv:1809.08976v2 [cond-mat.mes-hall]
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