The adsorption, bonding, defect formation, and reactivity of hydrogen on different In 2 O 3 powder samples were studied by a combination of volumetric adsorption, thermal desorption, diffraction, and spectroscopic techniques. Surface reduction was observed in dry hydrogen up to 400 K, followed by reduction of surfacenear regions. Above 500 K bulk reduction, along with the formation of metallic In, sets in. Raman spectra indicate a considerable reordering of the In 2 O 3 structure in this temperature regime. Despite their TPD proven presence, the related adsorbed H-containing species were not detectable by Fourier transform infrared spectroscopy and/or Raman spectroscopy, in strong contrast to related experiments on -Ga 2 O 3 . Hydrogeninduced oxygen vacancies were found to be easily replenished by traces of water in the gas feed.

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Multi-wavelength visible-Raman spectroscopy was used to characterize HFCVD-grown nanocrystalline diamond films. The components forming the Raman spectra were evaluated following common interpretation models. The withdrawn information was correlated to film properties like grain size, morphology, roughness or refractive index derived from AFM, XRD and Ellipsometry. Full Paper: This paper demonstrates that semiconductor Te is an efficient catalyst for SWNTs growth. By using ethanol as carbon source and TeCl 4 as catalyst procursor superlong well-oriented SWNT arrays with high percentage semiconducting can be generated for various SWNT-based nanodevices fabrication and applications.

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