We experimentally demonstrate the use of high contrast, CMOS-compatible integrated photonic waveguides for Raman spectroscopy. We also derive the dependence of collected Raman power with the waveguide parameters and experimentally verify the derived relations. Isopropyl alcohol (IPA) is evanescently excited and detected using single-mode silicon-nitride strip waveguides. We analyze the measured signal strength of pure IPA corresponding to 819 cm -1 Raman peak due to inphase C-C-O stretch vibration for several waveguide lengths, and deduce a pump power to Raman signal conversion efficiency on the waveguide to be at least 10 -11 per cm.
Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at ¼ 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses G 1 dB/cm were achieved at ¼ 900 nm, whereas losses were measured in the range of 1-3 dB/cm for ¼ 780 and 532 nm, respectively.
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