Conformationally rigid multipodal molecules should control the orientation and packing density of functional head groups upon self-assembly on solid supports. Common tripods frequently fail in this regard, because of inhomogeneous bonding configuration and stochastic orientation. These issues are circumvented by a suitable tetrapodal diazatriptycene moiety, bearing four thiol-anchoring groups, as demonstrated in the present study. Such molecules form well defined self-assembled monolayers (SAMs) on Au(111) substrates, whereby the tetrapodal scaffold enforces a nearly upright orientation of the terminal head group with respect to the substrate even in case of 75% covalent attachment to the surface. Functionalization by condensation chemistry allows a large variety of functional head groups to be introduced to the tetrapod, paving the path towards advanced surface engineering and sensor fabrication.
Electrical doping is an important tool in the design of organic devices to modify charge carrier concentration in and Fermi level position of organic layers. The undesired diffusion of dopant molecules within common transport materials adversely affects both lifetime and device performance. To overcome this drawback, we developed a strategy to achieve immobilization of dopants through their covalent attachment to the semiconductor host molecules. Derivatization of the commonly employed n-type dopant 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) with a phenylazide enables the resulting o-AzBnO-DMBI to photochemically generate a reactive nitrene, which subsequently binds covalently to the host material, 6,6-phenyl-C 61 -butyric acid methyl ester (PCBM). Both the activation and addition reactions are monitored by mass spectrometry as well as optical and photoelectron spectroscopy. A suppression of desorption and a decrease in volatility of the DMBI derivative in ultrahigh vacuum were observed after activation of a bilayer structure of PCBM and o-AzBnO-DMBI. Electrical measurements demonstrate that the immobilized o-AzBnO-DMBI can (i) dope the PCBM at conductivities comparable to values reported for o-MeO-DMBI in the literature and (ii) yield improved electrical stability measured in a lateral two terminal device geometry. Our immobilization strategy is not limited to the specific system presented herein but should also be applicable to other organic semiconductor−dopant combinations.
Studying the structure-property relations of tailored dipolar phenyl and biphenylphosphonic acids, we report self-assembled monolayers with a significant decrease in the work function (WF) of indium-tin oxide (ITO) electrodes. Whereas the strengths of the dipoles are varied through the different molecular lengths and the introduction of electron-withdrawing fluorine atoms, the surface energy is kept constant through the electron-donating N, N-dimethylamine head groups. The self-assembled monolayer formation and its modification of the electrodes are investigated via infrared reflection absorption spectroscopy, contact angle measurements, and photoelectron spectroscopy. The WF decrease in ITO correlates with increasing molecular dipoles. The lowest ever recorded WF of 3.7 eV is achieved with the fluorinated biphenylphosphonic acid.
Ferroelectric polymer memory diodes are interface devices where charge injection into the organic semiconductor is controlled by the stray electric field of the ferroelectric polymer. Key to high current density and current modulation is the areal density of well-defined interfaces. Here, bistable diodes are fabricated by using the soft lithography method solution micromolding. First, the semiconducting polymer poly(9,9-dioctylfluorene) is patterned into linear gratings. Subsequently, bilinear arrays are obtained by backfilling with the ferroelectric polymer poly(vinylidenefluoride-co-trifluoroethylene). The lateral feature size is scaled down from 2 mu m to 500 nm. Comprising memory diodes show rectifying J-V characteristics with an On-current density larger than 10(3) A m(-2) and an On/Off current ratio exceeding 10(3). The charge transport is explained by 2D numerical simulations. Since the dependence of polarization on electric field is explicitly taken into account, entire J-V characteristics can be quantitatively described. The simulations reveal that rectifying J-V characteristics are inherently related to the concave shape of the patterned ferroelectric polymer. It is argued that the exponential increase in current density with decreasing feature size can be due to confinement of the semiconductor. High On-current density combined with downscaling, rectification, and simple fabrication yield new opportunities for low-cost integration of high-density solution-processed memories
Poly(3‐hexyl‐thiophene‐2,5‐diyl) (P3HT) is one of the most commonly used materials in organic electronics, yet it is considered to be rather unattractive for organic field‐effect transistors (OFETs) due to its tendency to oxidize under aerobic conditions. Strong p‐doping of P3HT by oxygen causes high off‐currents in such devices opposing the desired high on/off‐ratios. Herein, a new application‐oriented method involving the recently developed immobilizable organic n‐dopant 2‐(2‐((4‐azidobenzyl)oxy)phenyl)‐1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol (o‐AzBnO‐DMBI) is presented allowing to process and operate P3HT OFETs in air. The n‐dopants compensate oxygen doping by trapping generated free holes, thereby rediminishing OFET off‐currents by approximately two orders of magnitude. At the same time, field‐effect mobilities remain high in the order of up to 0.19 cm2 V−1 s−1. Due to the covalent attachment of the dopants to the host matrix after photochemical activation, a drift of the otherwise mobile ions within the device is prevented even at high operating voltages and, thus, hysteresis in the corresponding transfer characteristics is kept low. In this manner, the air instability of P3HT OFETs is successfully resolved paving an auspicious way toward OFET mass production. As the immobilization process employed here is nonspecific with respect to the host material, this strategy is transferable to other p‐type semiconductors.
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