The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

White organic LEDs are seen as one of the next generation light-sources, with their potential to reach internal efficiencies of unity and their unique appearance as large-area and ultrathin devices. However, to replace existing lighting technologies, they have to be at least on par with the state-of-the-art. In terms of efficiency, the fluorescent tube with 60-70 lumen per Watt (lm W-1) in a fixture is the current benchmark. In the scientific literature, so far only values of 44 lm W-1 have been published for white OLEDs.Here, we present results (Reineke et al., Nature 459, 234 (2009)) of white OLEDs with 90 lm W-1 at an illumination relevant brightness of 1,000 candela per square meter (cd m-2). Extracting all light from the glass substrate using a 3D light extraction system, we even obtain 124 lm W-1. In order to achieve such high efficacy values, we reduced the energetic losses prior to photon emission that include ohmic and thermal relaxation losses, leading to very low operating voltages. This is accomplished by the use of doped transport layers and a novel, very energy efficient emission layer concept. Equally important, we addressed the optics of the OLED architecture, because about 80% of the generated light remains trapped in conventional devices. Therefore, we used high refractive index substrates to couple out more light and placed the emission to the second field antinode to avoid plasmonic losses. Our devices are also characterized by an outstandingly high efficiency at high brightness, reaching 74 lm W-1 at 5,000 cd m-2.

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital-lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

Recently, several memory devices based on organic semiconductors were reported. In most cases, single organic layers were employed, and the switching mechanisms were not fully understood. Here, we report on a novel device structure based on electrically doped organic heterostructures showing highly stable memory behavior. The organic layers are embedded between a bottom indium tin oxide and a top metal contact and form a quantum well-like structure. The device shows a hysteresis in the current-voltage characteristics and well-defined switching behavior. We achieved reproducible bistable electrical switching and stable memory phenomena in these organic multilayer heterostructure devices. The two states were retained for up to several days without noticeable decrease of their on/off ratio. Further, it was found that the ratio of the on/off current depends on the writing voltage, allowing the use as multistate memory.

We report on the resistive switching effect in metal/organic semiconductor/metal structures and present a general explanation of the switching mechanism in these devices. The J-V characteristics of metal/tris(8- hydroxyquinolinato)aluminum (Alq3)/metal devices will be discussed and it will be further shown that these sustain only a limited number of switching cycles. Besides Alq3, we also investigate other organic semiconductor materials and obtain a bistable behavior, which is independent of the organic material but dependent on the current injection conditions of the interface between the organic material and the metal top electrode. Further, we investigate the material independent switching effect using impedance spectroscopy and can disclose a transition from capacitive to resistive behavior at switching voltages. We propose that the switching in metal/organic semiconductor/metal structures is caused by the growth and rupture of resistive filaments in the organic semiconductor.