Thin films of Cu2O were electrodeposited and characterised by techniques including XRD, SEM–EPMA, and spectrophotometry. The structure, morphology, composition, and optical properties of the films depend on the electrochemical bath and deposition parameters. The kind of substrate pretreatment process also seems to have an effect on film properties. The electrodeposited Cu2O films may be used for photovoltaic, photothermal, and oxygen sensor applications.
In this work we present the results of comparative study n-and p-doping of Ge:H and Ge 0.96 Si 0.04 :H films deposited by LF PECVD at high deposition temperature (HT) T d =300°C and low deposition temperature (LT) T d =160°C. The concentration of boron and phosphorus in solid phase was measured by means of SIMS technique. Such parameters as spectral dependence of absorption coefficient, room temperature conductivity σ RT and activation energy E a for both intrinsic and doped films were obtained. The doping range studied in gas phase was for boron [B] gas = 0 to 0.15% and for phosphorus [P] gas = 0 to 0.2%. In general effect of deposition temperature on P and B doping has been demonstrated. For LT films changes of [P] gas =0.04% to 0.22% resulted in more than 2 orders increasing conductivity and reducing activation energy from E a =0.28 to 0.16 eV. HT films in the range of [P] gas =0.04% to 0.2% demonstrated saturation of conductivity. HT films showed continuous reducing E a with increase of [P] gas . In the case of boron doping both HT and LT films had a minimum of conductivity at certain values of [B] gas =0.05% (LT films) and 0.04% (HT films) and related maximums of activation energy E a(max) at the same doping with E a(max) =0.47 eV for HT and E a(max) =0.53 eV for LT films. It suggests a compensation of electron conductivity in un-doped films for low B doping. Further raising [B] gas leads to reducing E a and the smallest E a =0.27 eV was obtained at [B] gas =0.18% for HT films and E a =0.33 eV at [B] gas =0.14% for LH films.
The dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pmSi:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (R sh ) and series (R s ) resistance, ideality factor (n), and the saturation current (
Ge x Si 1-x :H) films are of much interest for many device applications because of narrow band gap and compatibility with films deposited by plasma. However, electronic properties of Ge x Si 1-x :H films for high Ge content x > 0.5 have been studied less than those of Si films. In this work, we present a study of sub-gap photoconductivity (σ pc ) in Ge x Si 1-x :H films for x = 1 and x = 0.97 deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) with both various H-dilution (R H ) during growth (non-doped films) and boron (B) incorporation in the films. Spectra of sub-gap photoconductivity σ pc (hν) were measured in the photon energy range of hν = 0.6 to 1.8 eV. σ pc (hν) spectra were normalized to constant intensity. For hν < E g two regions in σ pc (hν) can be distinguished: "A", where σ pc is related to transitions between tail and extended states, and "B", where photoconductivity is due to defect states. σ pc (hν) in "A" region showed exponential behavior that could be described by some characteristic energy E U PC similar to Urbach energy E U in spectral dependence of optical absorption. E U PC > E U was observed in all the films studied. This together with higher relative values (i.e. normalized by the maximum value at hν = E g ) for photoconductivity comparing with those for α means that mobility-lifetime product (µτ) depends on photon energy µτ = f(hν) that was determined from α(hν)and σ pc (hν). µτ(hν) increases by factor of 20 to 40 depending on the sample with reducing hν from 1.1 to 0.7 eV. In some samples, this dependence was monotonous, while in others demonstrated maxima related to both interference and density of states. Effects of both R H and boron incorporation have been found and are discussed.
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