Tungsten oxide nanostructures were deposited on silicon substrates by a thermal oxidation approach. The major factors influencing their phase structure and growth morphology were found to be the substrate temperature and the chamber pressure. By investigating the growth process of these nanostructures, a phase growth diagram was constructed, with which one can realize the phase selection and morphology control of the tungsten oxide nanostructures by this thermal oxidation approach. The present study could be of great significance in fabricating tungsten oxide nanostructures for device applications.
<p>Over the last ten years, a significant number of new underground metro infrastructures projects have been initiated worldwide. Most of these huge, strategic and costly projects are located into fast developing or dense urban areas, facing thus important challenges: interactions with existing buildings, safety risks for the population, validation of innovative construction processes, environmental issues and long-term serviceability. This paper aims to illustrate some of innovative concepts, methods and assessment devices benefit recent projects in addressing some of these important issues.</p>
When synthesizing tungsten oxide nanorods using thermal oxidation, the deposition conditions play an important role in the morphology and phase structure. The evaporation voltage greatly influences the average diameter of the nanorods. The evaporation time controls the deposit thickness, while the deposition temperature determines the phase structure.
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