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We report for the first time experimental investigations on SOI, Si 1-x Ge x OI & GeOI Tunnel FET (TFET). These devices were fabricated using a Fully Depleted SOI CMOS process flow with high k-metal gate stack, enabling 2 decades lower I OFF (~30fA/µm) compared to co-processed CMOS. We successfully solve the TFET bipolar parasitic conduction by a novel TFET architecture, the Drift Tunnel FET (DTFET), with improved OFF state control. Concerning the ON current issue, we improve the SOI p (resp. n) TFET

This paper presents a CMOS-compatible wafer-level fabrication process for monolithic CMOS/MEMS sensor systems coated with sensitive layers directly deposited by means of flame spray pyrolysis (FSP). Microhotplate (µHP)-based devices, featuring an FSP directly deposited SnO 2 /Pt layer, have successfully been realized on a wafer level. The thermal characterization evidenced a thermal resistance of 10.6 • C mW −1 ; moreover, gas test measurements with ethanol have been performed. Microhotplate membrane deformations during device operation have been investigated and have been reduced by adjustment of the intrinsic stress of a deposited silicon nitride layer.

The goal of this paper is to present and to analyze the Tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-"kT/q" swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si 1-x Ge x OI & GeOI TFETs, fabricated using a Fully Depleted SOI CMOS process flow with high-k & metal gate stack.

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For the first time a packaged single-chip anemometry microsystem is reported. The system includes a thermal CMOS flow sensor with on-chip power management, signal conditioning, and A/D conversion. It is fabricated using an industrial IC process followed by post-CMOS micromachining. The system is packaged on a flexible substrate using flip-chip interconnection technology. The measurement of wind speeds is demonstrated in the range from 0 to 38 m/s (0 to 12 Beaufort), with a dynamic range of 65 dB. Total power consumption is 3 mW.

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