In this paper we present a complete theoretical analysis of the oscillating photocarrier grating (OPG) method, starting from the generalized equations that describe charge transport and recombination under oscillating grating illumination conditions. The solution of these equations allows us to implement a calculation reproducing the experimental OPG curves. We study both experimentally and from our calculations the dependence of the OPG curves on different external parameters, such as the applied electric field, grating period and illumination intensity. We find that the response of the sample is linked to a characteristic time of the material, which could be the dielectric relaxation time or the small signal lifetime depending on the regime at which the experiment is performed. Therefore, the OPG technique provides a simple method to estimate these parameters. In addition, we demonstrate that the small signal lifetime provides information on the density of states of the material.
International audienceIn this paper, we show that the combination of different characterization techniques based on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on the density of states and transport parameters of this material. We insist mainly on two techniques in which one records a photocurrent resulting from the movement of an interference grating onto a sample. We describe the experimental set-ups and provide a theoretical explanation of the observed behaviors of these photocurrents. We demonstrate that a density of state spectroscopy can be done with these techniques. Additionally, comparing this spectroscopy to that performed with modulated photocurrent experiment, we show that it is possible to derive a good order of magnitude estimate of the electron capture coefficient of the conduction band tail states as well as the electronic extended states mobility. The derived parameters are compared with previous results
The Moving photocarrier Grating Technique (MGT) allows the simultaneous determination of the photocarrier drift mobilities and the small-signal recombination lifetime of photoconductive semiconductors. The technique measures the direct current (DC) induced by a monochromatic illumination consisting of a moving interference pattern superimposed on a uniform background of much higher intensity. A drawback of the technique is the low level of the signal to be measured, which can be masked by the noise at low temperatures or low light intensities. In this work, we propose implementing an alternating current (AC) version of the MGT by chopping the weak beam in the standard configuration. We call this new technique the Chopped Moving photocarrier Grating (CMG). In CMG, the AC signal can be measured with a lock-in amplifier for electrical noise removal. In this way, the signal-to-noise ratio can be increased compared to the standard DC technique. Assuming a multiple-trapping model for charge transport, we find the theoretical expression for the current density induced by CMG at fundamental frequency. By using a numerical simulation with parameters typical for hydrogenated amorphous silicon, we verify the expected equivalence between both techniques for low enough chopping frequencies. Then, we test experimentally this equivalence for an undoped hydrogenated amorphous silicon sample. For low signal levels, we demonstrate the superior performance of CMG.
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