This paper reports on how the surface chemistry of boron-doped nanocrystalline diamond (BDD) thin-film electrodes (H vs O) affects the wettability and electrochemical properties in two room-temperature ionic liquids (RTILs): [BMIM][PF6] and [HMIM][PF6]. Comparative measurements were made in 0.5 mol L–1 H2SO4. The BDD electrodes were modified by microwave or radio-frequency (RF) plasma treatment in H2 (H-BDD), Ar (Ar-BDD), or O2 (O-BDD). These modifications produced low-, medium-, and high-oxygen surface coverages. Atomic O/C ratios, as determined by X-ray photoelectron spectroscopy (XPS), were 0.01 for H-BDD, 0.08 for Ar-BDD, and 0.17 for O-BDD. The static contact angle of ultrapure water on the modified electrodes decreased from 110° (H-BDD) to 41° (O-BDD) with increasing surface oxygen coverage, as expected as the surface becomes more hydrophilic. Interestingly, the opposite trend was seen for both RTILs as the contact angle increased from 20° (H-BDD) to 50° (O-BDD) with increasing surface oxygen coverage. The cyclic voltammetric background current and potential-dependent capacitance in both RTILs were largest for BDD electrodes with the lowest O/C ratio (H-BDD) and smallest contact angle. Slightly larger voltammetric background currents and capacitance were observed in [HMIM][PF6] than in [BMIM][PF6]. Capacitance values ranged from 8 to 16 μF cm–2 over the potential range for H-BDD and from 4 to 6 μF cm–2 for O-BDD. The opposite trend was observed in H2SO4 as the voltammetric background current and capacitance were largest for BDD electrodes with the highest O/C ratio (O-BDD) and smallest contact angle. In summary, reducing the surface oxygen on BDD electrodes increases the wettability to two RTILs and this increases the voltammetric background current and capacitance.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.