Real-time, high resolution, simultaneous measurement of multiple ionic species is challenging with existing chromatographic, spectrophotometric and potentiometric techniques. Potentiometric ion sensors exhibit limitations in both resolution and selectivity. Herein, we develop wafer scale graphene transistor technology for overcoming these limitations. Large area graphene is an ideal material for high resolution ion sensitive field effect transistors (ISFETs), while simultaneously enabling facile fabrication as compared to conventional semiconductors. We develop the ISFETs into an array and apply Nikolskii–Eisenman analysis to account for cross-sensitivity and thereby achieve high selectivity. We experimentally demonstrate real-time, simultaneous concentration measurement of K+, Na+, $${{\rm{NH}}}_{4}^{+}$$NH4+, $${{\rm{NO}}}_{3}^{-}$$NO3−, $${{\rm{SO}}}_{4}^{2-}$$SO42−, $${{\rm{HPO}}}_{4}^{2-}$$HPO42− and Cl− with a resolution of $$\sim\! 2\times 1{0}^{-3}\,{\mathrm{log}}\,$$~2×10−3log concentration units. The array achieves an accuracy of  ±0.05 log concentration. Finally, we demonstrate real-time ion concentration measurement in an aquarium with lemnoideae lemna over three weeks, where mineral uptake by aquatic organisms can be observed during their growth.

Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating.

Recent advances in large area graphene growth have led to many applications in different areas. In the present study, chemical vapor deposited (CVD) monolayer graphene supported on glass substrate was examined as electrode material for electrochemical biosensing applications. We report a facile strategy for covalent functionalization of CVD monolayer graphene by electrochemical reduction of carboxyphenyl diazonium salt prepared in situ in acidic aqueous solution. The carboxyphenyl-modified graphene is characterized using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM), as well as electrochemical impedance spectroscopy (EIS). We also show that the number of grafted carboxyphenyl groups on the graphene surface can be controlled by the number of cyclic voltammetry (CV) scans used for electrografting. We further present the fabrication and characterization of an immunosensor based on immobilization of ovalbumin antibody on the graphene surface after the activation of the grafted carboxylic groups via EDC/NHS chemistry. The binding between the surface-immobilized antibodies and ovalbumin was then monitored using Faradaic EIS in [Fe(CN) 6 ] 3-/4-solution. The percentage change of charge transfer resistance (R ct ) after binding exhibited a linear dependence for ovalbumin concentrations ranging from 1.0 pg·mL -1 to 100 ng·mL -1 , with a detection limit of 0.9 pg·mL -1 . Our results indicate good sensitivity of the developed functionalized CVD graphene platform, paving the way for using CVD monolayer graphene in a variety of electrochemical biosensing devices.

Hexagonal boron nitride (hBN) is a wide-gap material that has attracted significant attention as an ideal dielectric substrate for 2D crystal heterostructures. We report here the first observation of in-plane charge transport in large-area monolayer hBN, grown by chemical vapor deposition. The quadratic scaling of current with voltage at high bias corresponds to a space-charge limited conduction mechanism, with a room-temperature mobility reaching up to 0.01 cm(2)/(V s) at electric fields up to 100 kV/cm in the absence of dielectric breakdown. The observation of in-plane charge transport highlights the semiconducting nature of monolayer hBN, and identifies hBN as a wide-gap 2D crystal capable of supporting charge transport at high field. Future exploration of charge transport in hBN is motivated by the fundamental study of UV optoelectronics and the massive Dirac fermion spectrum of hBN.