We demonstrate a novel SAW device fabrication technique by mechanically clamping interdigital electrodes (IDEs) on the printed circuit board (PCB) to a LiNbO3 wafer. The novel PCB-SAW device is capable of performing all the functions of standard SAW devices.
Gallium nitride (GaN) is a compound semiconductor which shows advantages in new functionalities and applications due to its piezoelectric, optoelectronic, and piezo-resistive properties. This study develops a thin film GaN-based acoustic tweezer (GaNAT) using surface acoustic waves (SAWs) and demonstrates its acoustofluidic ability to pattern and manipulate microparticles. Compared with the conventional lithium niobate-based SAW devices, the GaNAT shows a good performance and reliability at high input powers with a superior thermal stability. Numerical modelling of the acoustic pressure fields and the trajectories of mixtures of microparticles driven by the GaNAT was performed and the results were verified from the experimental studies using samples of polystyrene microspheres. The work has proved the robustness of thin film GaN as a candidate material to develop high-power acoustic tweezers, with the potential of monolithical integration with electronics to offer diverse microsystem applications.
and Yang, Xin (2020) Gallium Nitride: a versatile compound semiconductor as novel piezoelectric film for acoustic tweezer in manipulation of cancer cells. IEEE Transactions on Electron Devices, 67 (8). pp. 3355-3361.
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