Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect that this material could be advantageously replaced with more efficient redox couples. We also discuss valuable information obtained by ultrafast transient absorption spectroscopy, which sheds some light on the factors that govern the efficiency of the cell. Notably, we demonstrate that ultrafast hole injection generally occurs between the sensitizer and the SC, but the resulting charge-separated state (e.g. electron on the sensitizer and hole in the VB) is short-lived and recombines quickly. So far, the only effective strategy for slowing the back recombination reaction relies on a bimolecular system consisting of the sensitizer linked to an electron acceptor, which increases the separation distance between the charges. A photoconversion efficiency of 0.41% under AM 1.5 was recently measured with a p-type DSSC using this strategy.
In tandem: Employing a molecular dyad and a cobalt-based electrolyte gives a threefold-increase in open-circuit voltage (V(OC)) for a p-type NiO device (V(OC) = 0.35 V), and a fourfold better energy conversion efficiency. Incorporating these improvements in a TiO(2)/NiO tandem dye-sensitized solar cell (TDSC), results in a TDSC with a V(OC) = 0.91 V (see figure; CB = conductance band, VB = valence band).
The dye-sensitized solar cell, based on the sensitization of a wide-band-gap p-type semiconductor (p-DSC), is an emerging and new generation of solar cell technology. p-DSCs share some similarities but also present some important differences with classical Graẗzel cells. Herein, we aim at reviewing the most important and recent developments that have been accomplished in p-DSCs. We analyze the new strategies and the materials recently reported to improve p-DSSC efficiency. For each component, p-SC, dye, and redox couple, we discuss the requirements for efficient energy conversion and analyze the opportunities for improvement and specific alternative solutions. This article provides a perspective on potentially fruitful research directions to overcome remaining challenges in this area.
A peryleneimide sensitizer and a covalently linked peryleneimide-naphthalenediimide dyad were prepared and characterized by absorption and emission spectroscopies, electrochemistry, and spectroelectrochemistry. These compounds were chemisorbed on nanoporous nickel oxide electrodes and then studied by femtosecond transient absorption spectroscopy in the presence of a redox active electrolyte (I 3 -/I -). In both compounds, upon excitation of the peryleneimide unit, an electron is efficiently ejected from the valence band of NiO to the dye with an average time constant of approximately 0.5 ps. In the case of the dyad, the excess electron is shifted further onto the naphtalenediimide unit, creating a new charge separated state. The latter exhibits a substantial retardation of the charge recombination between the hole and the reduced molecule compared with the peryleneimide sensitizer. The photoaction spectra of a sandwich dye-sensitized solar cell (DSSC) composed of NiO films and these new dyes were recorded, and the absorbed-photon to current conversion efficiency (APCE) was three times higher with the dyad than with the peryleneimide dye: 45%. The maximum APCE of approximately 45% is the highest value reported for a DSSC based on a nanostructured metal oxide p-type semiconductor.
This paper describes the preparation and the characterization of a photovoltaic cell based on the sensitization of a wide band gap p-type semiconductor (NiO) with a phosphorus porphyrin. A photophysical study with femtosecond transient absorption spectroscopy showed that light excitation of the phosphorus porphyrin chemisorbed on NiO particles induces a very rapid interfacial hole injection into the valence band of NiO, occurring mainly on the 2-20 ps time scale. This is followed by a recombination in which ca. 80% of the ground-state reactants are regenerated within 1 ns. A photoelectrochemical device, prepared with a nanocrystalline NiO electrode coated with the phosphorus porphyrin, yields a cathodic photocurrent indicating that electrons indeed flow from the NiO electrode toward the solution. The low incident-to-photocurrent efficiency (IPCE) can be rationalized by the rapid back recombination reaction between the reduced sensitizer and the injected hole which prevents an efficient regeneration of the sensitizer ground state from the iodide/triiodide redox mediator. To the best of our knowledge, this work represents the first example of a photovoltaic cell in which a mechanism of hole photoinjection has been characterized.
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