Orthographic knowledge is affected by language processing, which is associated with word exposure. This study used event-related potentials (ERP) to explore this association in Spanish-speaking adults with different levels of orthographic competence (High Spelling Skills: HSS; Low Spelling Skills: LSS) while they performed a lexical decision task on previously exposed words (1 or 5 times). Both groups benefited from the exposure rate, but HSS reached significantly higher correct and faster responses, particularly with repeated words. Word recognition potential (RP) amplitude was higher bilaterally in HSS group, especially with repeated words, while P220 was found to be right-lateralized and sensitive to word exposure. Also, the amplitude of P600 varied as a function of word exposure and positively correlated with reading speed. Results suggest that LSS group is less sensitive to word exposure and fails to automatize strategies to word recognition that affect reading fluency.
Sixteen ADHD children and a control group were asked to reproduce the varying time duration of successively presented visual stimuli. Time estimation was poorer in ADHD children, who showed more impulsive errors. ERPs exhibited similar grand-mean waveforms for both groups during the estimating period, but they were significantly different during the reproducing stage, when an early positive wave over frontal regions characterized the control group, interpreted as memory-guided motor output, followed by a slow negativity probably reflecting an inhibitory motor closure process, both probably involving central executive networks that seem to be improperly activated in ADHD children.
Reading speed and efficiency are achieved through the automatic recognition of written words. Difficulties in learning and recognizing the orthography of words can arise despite reiterative exposure to texts. This study aimed to investigate, in native Spanish-speaking late adolescents, how different levels of orthographic knowledge might result in behavioral and event-related brain potential differences during the recognition of orthographic errors. Forty-five healthy high school students were selected and divided into 3 equal groups (High, Medium, Low) according to their performance on a 5-test battery of orthographic knowledge. All participants performed an orthographic recognition task consisting of the sequential presentation of a picture (object, fruit, or animal) followed by a correctly, or incorrectly, written word (orthographic mismatch) that named the picture just shown. Electroencephalogram (EEG) recording took place simultaneously. Behavioral results showed that the Low group had a significantly lower number of correct responses and increased reaction times while processing orthographical errors. Tests showed significant positive correlations between higher performance on the experimental task and faster and more accurate reading. The P150 and P450 components showed higher voltages in the High group when processing orthographic errors, whereas N170 seemed less lateralized to the left hemisphere in the lower orthographic performers. Also, trials with orthographic errors elicited a frontal P450 component that was only evident in the High group. The present results show that higher levels of orthographic knowledge correlate with high reading performance, likely because of faster and more accurate perceptual processing, better visual orthographic representations, and top-down supervision, as the event-related brain potential findings seem to suggest.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.