Electronic devices grown by molecular beam epitaxy on a nanometer scale are presented. The use of a vertical device design in combination with delta-doping layers increases the performance of these devices. The vertical design offers the possibility of three dimensional device integration and allows the scaling of MOS field effect transistors down to its physical limits. The excellent crystal quality and doping profile is demonstrated by the very good performance of the grown devices.
The thermal diffuse scattering from a single crystal of NH4Br is investigated in the disordered high temperature range 293 K ≦ T ≦ 410 K up to the CsClNaCl structural phase transition. The diffraction of γ‐rays from a 2757Co Mössbauer source is utilized to discriminate between elastic and inelastic scattering events with an energy resolution dE = 28 neV. Two experimental procedures are proposed. For comparison with the experiments the inelastic cross‐section is evaluated from a lattice dynamical calculation in the long wavelength one‐phonon approximation. Enhanced inelastic intensities near Tc are observed.
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