Alloy thin films of hydrogenated silicon-oxygen-carbon ͑Si,C͒O x xϽ2, were deposited and analyzed in terms of changes in structure and bonding as a function of rapid thermal annealing between 600 and 1100°C using a combination of Fourier transform infrared spectroscopy, Raman scattering and high-resolution transmission electron microscopy. Results showed that three structural/chemical transformations took place upon annealing. The initial reaction ͑600-800°C͒ involved the loss of hydrogen bonded to both silicon and carbon. At intermediate temperatures ͑900-1000°C͒ a Si-O-C type bond was observed to form, and subsequently disappear after annealing to 1050°C. The formation of ordered amorphous-SiC regions, nanocrystalline-Si regions, and stoichiometric, thermally relaxed SiO 2 accompanied the disappearance of the Si-O-C bond at the 1050°C annealing temperature. Using this alloy as a model system, important information is obtained for optimized processing of SiC-SiO 2 interfaces for device applications.
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