Fusion of multiple biometrics for human authentication performance improvement has received considerable attention. This paper presents a novel multimodal biometric authentication method integrating face and iris based on score level fusion. For score level fusion, support vector machine (SVM) based fusion rule is applied to combine two matching scores, respectively from Laplacianface based face verifier and phase information based iris verifier, to generate a single scalar score which is used to make the final decision. Experimental results show that the performance of the proposed method can bring obvious improvement comparing to the unimodal biometric identification methods and the previous fused face-iris methods.

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Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

The geometrical factor in freckle formation has rarely been taken into account. In this work, freckle formation in superalloy components is examined. It is found that freckle formation is subject to the effects of the edge and curvature. In polygonal casting sections, freckles are formed preferably on the convex edges. In the components with a curved contour, freckles are exclusively formed on the outward-curving surface having positive curvature.