Electronic and optical properties of silicon nanocrystals are calculated and discussed within a semiempirical tight-binding approach, which allows to study systems composed of thousands of atoms. Oscillator strengths, frequency-dependent optical absorption cross sections, and static dielectric constants are investigated for both spherical and ellipsoidal nanocrystals, with the aim of pointing out their size- and shape-dependent features. We show that the anisotropy of the optical functions follows the nanocrystal shape, and a comparison is discussed between very elongated structures and quantum wires

We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities, either boron or phosphorous (doping) or both (codoping), located at different substitutional sites of silicon nanocrystals with size ranging from 1.1 to 1.8 nm in diameter. We have found that the codoped nanocrystals have the lowest impurity formation energies when the two impurities occupy nearest neighbor sites near the surface. In addition, such systems present band-edge states localized on the impurities, giving rise to a redshift of the absorption thresholds with respect to that of undoped nanocrystals. Our detailed theoretical analysis shows that the creation of an electron-hole pair due to light absorption determines a geometry distortion that, in turn, results in a Stokes shift between adsorption and emission spectra. In order to give a deeper insight into this effect, in one case we have calculated the absorption and emission spectra beyond the single-particle approach, showing the important role played by many-body effects. The entire set of results we have collected in this work give a strong indication that with the doping it is possible to tune the optical properties of silicon nanocrystals

A new formulation of time-dependent density functional tight binding (TD-DFTB) is reported in this paper. It is derived from the application of the linear response theory to the ground state DFTB Hamiltonian, without the introduction of additional parameters for the description of the excited states. The method is validated for several sets of organic compounds, against the best theoretical estimates from the literature, density functional theory, semiempirical methods, and experimental data. The comparison shows that TD-DFTB gives reliable results both for singlet and triplet excitation energies. In addition, the application of TD-DFTB to open-shell systems shows promising results.

The effects of B and P codoping on the impurity formation energies and electronic properties of Si nanocrystals (Si-nc) are calculated by a first-principles method. We show that, if carriers in the Si-nc are perfectly compensated by simultaneous doping with n- and p-type impurities, the Si-nc undergo a minor structural distortion around the impurities and that the formation energies are always smaller than those for the corresponding single-doped cases. The band gap of the codoped Si-nc is strongly reduced with respect to the gap of the pure ones showing the possibility of an impurity based engineering of the photoluminescence properties of Si-nc