We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to “clean” the top layer from pre-existing defects.
Based on the experimental equations of state (EOS) of the parameters reported in the literature, in the present work, we reproduced the variation in the unit cell volume up to phase transition pressure for calcium-based chalcogenide CaX (X S, Se, Te) semiconductor materials. We also studied the high-pressure effect on the crystal density, isothermal bulk modulus, the first order pressure derivative of the isothermal bulk modulus, and the Grüneisen parameter for CaX (X S, Se, Te) binary compounds. It was found that, as the pressure increases, both the crystal density and the isothermal bulk modulus increase, while the first order pressure derivative of the bulk modulus and the Grüneisen parameter decrease gradually for all materials of interest. Similar behaviors of all these parameters against pressure were observed for several materials in the literature.
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