The magnetic and electrical properties of crystalline Mn0.05Si0.95 films prepared by post-thermal treatment of the as-deposited amorphous Si-Mn (95at.%−5at.%) have been investigated. Both the temperature dependence and field dependence of magnetization were measured using superconducting quantum interference devices, and it has been indicated that the film materials are ferromagnetic with Curie temperature over 400K. X-ray diffraction analysis revealed full crystallization of the films and the incorporation of Mn into the host crystalline Si lattice. Behavior of thermally activated conduction processes of the films has been evinced by electrical property measurement for the films.
Ultrathin (15nm) Fe3O4 nanocrystalline films with (111) spinel texture have been prepared by rapid annealing of amorphous ion oxide films. Large low field magnetoresistance (LFMR), with the values of about −6.3% at 300K and −10% at 200K under a field of 0.5T, has been observed in the films. The LFMR is mainly attributed to the boundary tunneling of high spin-polarized electrons in Fe3O4 grains of the films and nearly follows a simple relationship between MR and polarization for intergranular tunneling. The fabricating method here seems to be a good approach to prepare high quality Fe3O4 nanocrystalline films with a large LFMR at room temperature.
In this report, we discuss the 22% efficiency improvement of solar cells based on the MAPbI3 perovskite film extracted with a mixed anti-solvent. The film quality of MAPbI3 extracted from the mixed anti-solvent of ether and isopropanol is improved greatly. The average grain size of the film may be enlarged twice. We argue that some solvents residing in the precursor may effectively promote the crystallization process of MAPbI3 to form large grains. We believe that this study may open a method to fabricate high-quality MAPbI3 perovskite films for highly efficient solar cells.
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