In this work, we report the properties of ZnO 2 thin films deposited at room temperature by a twostep successive ionic layer adsorption and reaction (SILAR) method. The thermal evolution of the as-deposited ZnO 2 films into ZnO ones was analyzed by in-situ XRD measurements at different temperatures and thermogravimetric analysis (TGA). The results show that the crystalline phase transition from ZnO 2 with cubic structure into ZnO with hexagonal one takes place at around 200 °C. Then, ZnO 2 films deposited at different cycles were thermal annealed at 300 °C, 400 °C and 500 °C to obtain hexagonal-structured ZnO films. After analyzing the properties of the ZnO films, they were used to assemble p-n heterostructures employing p-Si wafers. For this, ZnO 2 films were deposited by the SILAR method on p-Si wafers and converted to n-ZnO by thermal treatment at 500 °C. The analysis of the electrical current versus voltage curves, in dark and under illumination, of the p-Si/n-ZnO heterostructure shows photodiode characteristics with well-defined current rectification of several orders. The photosensitivity of the assembled photodiode was determined in the visible spectral region. Transient photocurrents were recorded at several voltages under illumination with several light intensities.
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