A parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified that the internal stress changes from tension to compression as a function of supplied rf power density during deposition process. Supplied rf power density is closely connected to H o and SiH* optical emission intensity ratio (H α /SiH* ) of CVD plasma. Ve find that the internal stress can be reduced remarkably by controlling this ratio to 0.3. This H α/SiH* parameter has a superiority that the internal stress can be in situ controlled.
For an application for electrophotographic photoreceptors, a‐Si1‐xCx:H film was prepared by a plasma CVD method with C2H4 or CH4 as a carbon source, and the dependence of water wettability on the source gas and carbon concentration as well as the dependence of the contact angle with water on the corona exposure has been examined. Surface reactants formed after the corona exposure have also been examined. As a result, it was found that the wettability of the a‐Si1‐xCx:H film decreases with the carbon concentration independent of the source gas. However, corona exposure for one hour increased the water wettability. This trend was found to be independent of the carbon concentration in the film. As a result of the infrared absorption spectrum, this was attributed to the formation of Si‐Ox bond (x = 1.7 ‐ 2.0) by corona exposure.
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