This paper is concerned with the numerical simulation of the defect density influence on the steady state response of a silicon-based p-i-n cell under reverse bias dark conditions. To show this effect, the numerical simulation is performed on a crystalline cell containing a single discrete level of defects in the energy gap and in which the density of defects is varied. Afterwards, we extend our model to a typical amorphous silicon cell by including band tails and dangling bonds. The density of dangling bonds is calculated according to the defect pool model. For both cases, a detailed description of the physical model and its mathematical formulation is presented. By analysing the different variables which describe the electrical behaviour of the cell in the steady state such as the free carrier distributions, the carrier lifetimes and the quasi-Fermi levels, we show how the density of defects changes the semiconductor regime from lifetime to relaxation.
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