This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining on high-resistivity 100 oriented silicon. A three-layer dielectric membrane, with a total thickness of 1.5 µm is used as support for the millimetre-wave structures. This process was used for the manufacturing of two coupled line filters, with central operating frequencies of 38 and 77 GHz, respectively. The second process is based on GaAs micromachining. For the first time, a 2.2 µm thin GaAs/AlGaAs membrane, obtained by molecular beam epitaxy growth and micromachining of semi-insulating 100 GaAs, is used as a support for millimetre-wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequencies of 38 and 77 GHz, respectively, were designed and manufactured on a GaAs micromachined substrate. 'On wafer' measurements for the filter structures were performed. Losses of less than 1.5 dB at 38 GHz and less than 2 dB at 77 GHz have been obtained for both the silicon as well as for the GaAs-based micromachined filters.
This paper presents, the inctriut&ctriring of microniuchined ,filters ,fbr 38 ontl 77 GIlz using two d(Jferent t-ype of structures: The ,first filter structures hnve cis support LI 1.5 p i n Si02LSi.,N&iOz nieinhrcine; the ,second type of,filter structures ore supported on 2.2 ,unr thin CciAs/AlCnAs nicwd?rune. These rnenihrcines were niuriujiictured using selective dry etching rechniyiies with A1GnA.s us uti etch-stol~ luyer. On wufer nieu~ureiiient~ of the ,filter Structiire.s were perfimned. For I h e GuAs bused nzicrr~niachined ,filte/-.s, losses less tli~in 1.5 tlR ut 38 GHz m r l l e s s tlirirr 2 tlH ut 77 GHz hove been ohtuined.
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