We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T to measure the electron effective mass in Si-doped GaAsN semiconductor alloys with nitrogen content up to 0.2%. This technique directly probes the transport properties of the N-modified conduction band, particularly the electron effective mass, which has been discussed controversially in the experimental and theoretical literature. We report a slight increase of the electron effective mass and nonparabolicity with N-content for different photon energies in agreement with the two-level band anticrossing model calculations. Furthermore, we show a pronounced electron mobility drop with increasing N-content.
Time-resolved terahertz quenching studies of the magnetoexcitonic photoluminescence from GaAs/AlGaAs quantum wells are performed. A microscopic theory is developed to analyze the experiments. Detailed experiment-theory comparisons reveal a remarkable magnetic-field controllability of the Coulomb and terahertz interactions in the excitonic system.
An intense terahertz field is applied to excite semiconductor quantum wells yielding strong non-equilibrium exciton distributions. Even though the relaxation channels involve a complicated quantum kinetics of Coulomb and phonon effects, distinct relaxation signatures of Coulomb scattering are identified within time-resolved photoluminescence by comparing the experiment with a reduced model that contains all relevant microscopic processes. The analysis uncovers a unique time scale for the Coulomb scattering directly from experiments and reveals the influence of phonon relaxation as well as radiative decay. V C 2014 AIP Publishing LLC. [http://dx.
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