Polycrystalline Cd1−xZnxTe films were grown on glass substrates over the full range of compositions (0 < x < 1) by metal–organic chemical vapour deposition at 480 °C. The films (∼5 µm thick) showed uniform texture oriented along the ⟨1 1 1⟩ direction, perpendicular to the substrate, independent of the film composition. The dependence of the lattice parameter of cubic Cd1−xZnxTe on the composition followed Vegard's law. The thick Cd1−xZnxTe films were shown to be of a single phase and structurally stable. The average grain size in the thick films was in the range 3–5 µm. The dominant imperfections in the films were twins (mostly Σ = 3) and dislocations. The x-ray diffraction (XRD) FWHM parameter reached a maximum at x = 0.5. Transmission electron microscopy (TEM) in situ heating in the range 200–400 °C caused plastic deformation in the grains without causing ordering effects. Optical absorption and low-temperature photoluminescence measurements confirmed the XRD and TEM results.
Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy Structure and thermoelectric properties of boron doped nanocrystalline Si 0.8 Ge 0.2 thin film
The incubation time for the crystallization of amorphous Ge (a-Ge) films was studied as a function of temperature between 150 and 500 °C by means of both in situ transmission electron microscopy and Raman scattering spectroscopy. The temperature dependence of the incubation time for free-sustained a-Ge films follows an Arrhenius curve with an overall (nucleation+growth) crystallization process activation energy of 2.0 eV. In the case where the a-Ge films were on Si3N4 substrates, an earlier stage of the crystallization was observed (nucleation), having an activation energy of 1.3 eV. In addition, it was found that a thin metallic layer of Al or Au, deposited on the a-Ge films, induces a very fast crystallization in the mode of dendritic growth, as reflected by a low activation energy (0.9 eV) for the incubation time temperature dependence.
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