A high spin polarization of states around the Fermi level, EF, at room temperature has been measured in the past at the interface between a few molecular candidates and the ferromagnetic metal Co. Is this promising property for spintronics limited to these candidates? Previous reports suggested that certain conditions, such as strong ferromagnetism, i.e., a fully occupied spin-up d band of the ferromagnet, or the presence of π bonds on the molecule, i.e., molecular conjugation, needed to be met. What rules govern the presence of this property? We have performed spin-resolved photoemission spectroscopy measurements on a variety of such interfaces. We find that this property is robust against changes to the molecule and ferromagnetic metal's electronic properties, including the aforementioned conditions. This affirms the generality of highly spin-polarized states at the interface between a ferromagnetic metal and a molecule and augurs bright prospects toward integrating these interfaces within organic spintronic devices.
Organic semiconductors constitute promising candidates toward large-scale electronic circuits that are entirely spintronics-driven. Toward this goal, tunneling magnetoresistance values above 300% at low temperature suggested the presence of highly spin-polarized device interfaces. However, such spinterfaces have not been observed directly, let alone at room temperature. Thanks to experiments and theory on the model spinterface between phthalocyanine molecules and a Co single crystal surface, we clearly evidence a highly efficient spinterface. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecule's nitrogen π orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanisms in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.
Organic semiconductors constitute promising candidates toward large-scale electronic circuits that are entirely spintronics-driven. Toward this goal, tunneling magnetoresistance values above 300% at low temperature suggested the presence of highly spin-polarized device interfaces. However, such spinterfaces have not been observed directly, let alone at room temperature. Thanks to experiments and theory on the model spinterface between phthalocyanine molecules and a Co single crystal surface, we clearly evidence a highly efficient spinterface. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecule's nitrogen p orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanisms in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.
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