We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure.
We have studied experimentally the angular distributions of fusion neutrons from plasmas of multi-keV ion temperature, created by 40 fs, multi-TW laser pulses in dense plumes of D2 and CD4 clusters. A slight anisotropy in the neutron emission is observed. We attribute this anisotropy to the fact that the differential cross section for DD fusion is anisotropic even at low collision energies, and this, coupled with the geometry of the gas jet target, leads to beam-target neutrons that are slightly directed. The qualitative features of this anisotropy are confirmed by Monte Carlo simulations.
We have developed, calibrated, and tested a high sensitivity neutron detector that can be operated in the harsh x-ray bremsstrahlung environment that exists in experiments conducted on the 20 MA Z z-pinch facility located at Sandia National Laboratories in Albuquerque, New Mexico. The detector uses a scintillator coupled to a microchannel-plate photomultiplier tube detector and extensive x-ray shielding.
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