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Stiction during the release step is one of the most important problems in micro-electromechanical systems (MEMS). This phenomenon, due to capillary forces and molecular adhesion, appears during drying after wet etching. This force is directly proportional to the surface tension of the last liquid used before drying. In this paper, we present firstly an experimental study of the influence of the liquid surface tension on the stiction of the SOI microstructure. In a second part we show how a new industrial bath process is able to perform the complete release step (etching, rinsing and drying).

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The parallel and perpendicular components of the calculated imaginary parts of the dielectric function for Ge(110), of the dielectric function shown in the middle section of Fig. 4, are incorrectly plotted. The dataline styles were mistakenly exchanged. However, the related discussion is correct; thus this mistake does not affect the conclusions of the paper.

By means of first principles calculations we show that morphology of TiO 2 nanowires in the rutile phase turns out to be important in their stability and band gap engineering. The most stable 〈001〉-oriented TiO 2 nanowires are found to display the {110} facets while the most thermodynamically favorable nanowires with the 〈110〉 axis are characterized by the {110} and {001} facets. Our results clearly demonstrate that appearance of the {100} facets in the shape of TiO 2 nanowires in the 〈001〉 orientation leads to a sizable reduction of band gaps, however, it does not cause the shift of the absorption edge to the lower energy range. Presence of flat bands similar to localized band gap states in the gap region of the 〈110〉-oriented TiO 2 nanowires is predicted to be an intrinsic feature, which is not connected with O vacancies. We also discuss how our findings can be used for optimization of photovoltaic and photocatalytic cells.

A detailed study of structural, electronic and optical properties of II–IV–N2 ternary compounds (II = Be, Zn; IV = Si, Ge) has been performed by means of ab initio density functional theory calculations. The germanium containing compounds were found to be direct‐gap semiconductors with gaps of 3.37 eV and 1.67 eV for BeGeN2 and ZnGeN2, respectively, with oscillator strength of direct transition comparable to GaN. Two other silicon containing compounds are characterized by indirect gaps of 5.19 (3.32) eV for BeSiN2 (ZnSiN2). Crystal structure being orthorhombic and lattice parameters for BeSiN2 and ZnSiN2 are in good agreement with the available experimental data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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