We demonstrate complete fabrication process integration and device performance of sturdy, self-supported transmission gratings in silicon. Gratings are patterned with nanoimprint lithography and aluminum liftoff on silicon-on-insulator wafers. Double-sided deep reactive ion etching (DRIE) creates freestanding 120 nm half-pitch gratings with 2000 nm depth and built-in 1 mm pitch bulk silicon support structures. Optical characterization demonstrates 10 −4 transmission of UV in the 190-250 nm band while a 25-30% geometric transparency allows particles to pass unimpeded for space plasma measurements.(Some figures in this article are in colour only in the electronic version) 2 The equation for de Broglie wavelength is λ = h mv 1 − v 2 c 2 , where h is Planck's constant (6.626 × 10 −34 J s) and m and v are the particle's rest mass (kg) and velocity (m s −1 ).
Three independent but complementary methods (OSL photoetching combined with etch rate profiling, spatially resolved PL and LST) were employed to Study the distribution of microdefects and electrically active centres in commercially available SI undoped. LEc-grown GaAs after different ingot-annealing treatments. A one-to-one correlation was obtained on comparing the microscale distribution of decoration precipitates (OPS), matrix precipitates (MPI) and microdefects (MMS) by the DSL and LST methods. Clustering of MPS is also revealed by PL intensity profiling and photoetch rate measurements. Two types of matrix microdefects are distinguishable by OSL photoetchlng In Samples after two-stage annealing. A high degree of homogeneity across the dislocation cells (after low-temperature and multiple annealing) was clearly revealed by a drastic decrease in the uniformity parameter (U) after DSL photoetching and by a significant decrease in the x intensity measured at the cell walls with respect to the cell interiors. Using the present results and recent data from the literature, an explanation of phase transitions during ingot annealing is proposed. This is based on the assumption that the final properties and structures after annealing are the result of two competitive processes: (i) formation of decoration and matrix microdefects; (ii) generation of electrically active point defects (clusters), presumably EL2
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