We present a first investigation of structural properties of Ag clusters with a diameter of up to 5.5 nm grown inside superfluid helium nanodroplets (He(N)) and deposited on an amorphous C surface. With high resolution transmission electron microscope images we are able to show that in addition to the crystalline face centered cubic (fcc) structure, noncrystalline icosahedral (Ih), and decahedral (Dh) morphologies are grown. Relative abundances (56% fcc, 31% Dh, and 13% Ih) as well as the size distribution of each morphology (mean diameters d(fcc)=2.62(5) nm, d(Dh)=3.34(7) nm, and d(Ih)=3.93(2) nm) do not reflect the situation expected from pure energetic considerations, where small Ihs should be followed by medium sized Dhs and large fccs. Instead, kinetic factors seem to play an important role in the formation of these structures, as it appears to be the case for clusters formed by inert gas aggregation. Considering the low temperatures (0.37 K) and extremely high cooling rates, we discuss basic ideas that might lead to a qualitative picture of the cluster formation process inside He(N).

A new method for nanostructure formation from conjugated polymers is presented: an aqueous dispersion of semiconducting polymer nanospheres (SPNs) is deposited by inkjet printing onto a polymer surface patterned by soft embossing. By interaction between the spheres and the undulated surface a self assembly process is triggered, resulting in the formation of SPN nanostructures determined by the template. Both template layer and assembled SPNs can be incorporated into a device structure. We demonstrate a light emitting structure for use in polymer light emitting devices including analyses by atomic force microscopy and Kelvin probe force microscopy.

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An aqueous dispersion of semiconducting polymer nanospheres was used to fabricate polymer light-emitting devices by inkjet printing in an easy-to-apply process with a minimum feature size of 20μm. To form the devices, the electroluminescent material was printed on a nonemitting polystyrene matrix layer and embedded by thermal annealing. The process allows the printing of light-emitting thin-film devices without extensive optimization of film homogeneity and thickness of the active layer. Optical micrographs of printed device arrays, electroluminescence emission spectra, and I∕V characteristics of printed ITO/PEDOT:PSS/PS/SPN/Al devices are presented.