Among the promising approaches for implementing high-performance computing, reconfigurable logic gates and logic-in-memory (LIM) approaches have been drawing increased research attention. These allow for improved functional scaling of a chip, owing to the improved functionality per unit area. Although numerous studies have been conducted independently for either reconfigurable logic or LIM units, attempts to construct a hybrid structure based on reconfigurable logic and LIM units remain relatively rare. In this study, we merge reconfigurable logic gates and LIM units to achieve a universal logic-in-memory (ULIM) cell for enabling all basic Boolean logic operations and data storage in a single cell. A ULIM cell consisting of silicon memory devices with reconfigurable n- and p-program modes can reconfigure logic operations within the complete set of Boolean logic operations. Moreover, the ULIM cell exhibits memory behaviors for storing output logic values without supply voltages for a certain period, resulting in zero static power consumption. Hence, this study provides a way to realize high-performance electronics by utilizing the silicon devices with a hybrid function of reconfigurable logic and LIM.
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic and memory operations of the LIM inverter were investigated by mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (V/V) when transitioning from logic ‘1’ to ‘0’ and 7.9 (V/V) when transitioning from logic ‘0’ to ‘1’, while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). Further, we investigated the hybrid logic and memory operations of the inverter using mixed-mode technology computer-aided design simulations. Our LIM inverter exhibited a high voltage gain of 296.8 (V/V) when transitioning from logic ‘1’ to ‘0’ and 7.9 (V/V) when transitioning from logic ‘0’ to ‘1’, while holding calculated logic at zero input voltage. The energy band diagrams of the n-FBFET structure demonstrated that the holding operation of the inverter was implemented by controlling the positive feedback loop. Moreover, the output logic can remain constant without any supply voltage, resulting in zero static power consumption.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.