We describe a highly efficient method for improving the hole injection of OLED devices through F plasma treatment. The optoelectrical property of OLED devices with F treated ITO had nearly identical to conventional OLED devices with p-doping process. Further, we demonstrate that the migration of F atoms and chemical reaction phenomenon near the interface of HTL improve hole injection and decrease built-in potential. The OLED devices in this fashion achieve a high reliability and costeffectiveness in the various electronic gadgets.

We describe a high performance architecture for improving the opto‐electronic characteristics of OLED devices through Double EML structure. The luminous efficiency has nearly 5% improvement compared with conventional devices. Further, we demonstrate that the cascade energy transfer structure can broaden recombination zone and the fast mobility of electrons prevent the quenching effect. The OLED devices in this fashion achieve a high performance and cost‐effectiveness in the various electronic gadgets.