A gold nanoparticle based dual fluorescence-colorimetric method was developed as an aptasensor to detect ampicillin using its single-stranded DNA (ssDNA) aptamer, which was discovered by a magnetic bead-based SELEX technique. The selected aptamers, AMP4 (5'-CACGGCATGGTGGGCGTCGTG-3'), AMP17 (5'-GCGGGCGGTTGTATAGCGG-3'), and AMP18 (5'-TTAGTTGGGGTTCAGTTGG-3'), were confirmed to have high sensitivity and specificity to ampicillin (K(d), AMP7 = 9.4 nM, AMP17 = 13.4 nM, and AMP18 = 9.8 nM, respectively). The 5'-fluorescein amidite (FAM)-modified aptamer was used as a dual probe for observing fluorescence differences and color changes simultaneously. The lower limits of detection for this dual method were a 2 ng/mL by fluorescence and a 10 ng/mL by colorimetry for ampicillin in the milk as well as in distilled water. Because these detection limits were below the maximum residue limit of ampicillin, this aptasensor was sensitive enough to detect antibiotics in food products, such as milk and animal tissues. In addition, this dual aptasensor will be a more accurate method for antibiotics in food products as it concurrently uses two detection methods: fluorescence and colorimetry.

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DC/AC characteristics of Si bulk FinFETs including middle-of-line levels are precisely investigated using well-calibrated 3-D device simulations for system-on-chip applications. Scaling the fin widths down to 5 nm effectively enhances gate-to-channel controllability and improves RC delay, but a dramatic increase in band-to-band tunneling currents from source-to-drain does not satisfy low-power application in the 7-nm node. All lightly-doped extension regions as a solution could improve band-to-band tunneling currents and total gate capacitances because of better short-channel immunity and lower parasitic capacitances, respectively. Using systematic TCAD-based RC calculation, we suggest optimized overlap/ underlap lengths in the 7-nm node FinFETs to overcome the scaling limitations.

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The MutS2 homologues have received attention because of their unusual activities that differ from those of MutS. In this work, we report on the functional characteristics and conformational diversities of Thermotoga maritima MutS2 (TmMutS2). Various biochemical features of the protein were demonstrated via diverse techniques such as scanning probe microscopy (SPM), ATPase assays, analytical ultracentrifugation, DNA binding assays, size chromatography, and limited proteolytic analysis. Dimeric TmMutS2 showed the temperature-dependent ATPase activity. The non-specific nicking endonuclease activities of TmMutS2 were inactivated in the presence of nonhydrolytic ATP (ADPnP) and enhanced by the addition of TmMutL. In addition, TmMutS2 suppressed the TmRecA-mediated DNA strand exchange reaction in a TmMutL-dependent manner. We also demonstrated that small-angle X-ray scattering (SAXS) analysis of dimeric TmMutS2 exhibited nucleotide- and DNA-dependent conformational transitions. Particularly, TmMutS2-ADPnP showed the most compressed form rather than apo-TmMutS2 and the TmMutS2-ADP complex, in accordance with the results of biochemical assays. In the case of the DNA-binding complexes, the stretched conformation appeared in the TmMutS2-four-way junction (FWJ)-DNA complex. Convergences of biochemical- and SAXS analysis provided abundant information for TmMutS2 and clarified ambiguous experimental results.

In this paper, we propose an optimized design for Si-nanowire FETs in terms of spacer dielectric constant (κsp), extension length (LEXT), nanowire diameter (Dnw), and operation voltage (VDD) for the sub-10 nm technology node. Using well-calibrated TCAD simulations and analytic RC models, we have quantitatively evaluated geometry-dependent parasitic series resistances (RSD) and capacitances (Cpara). Compared with low-κ spacers, high-κ spacers exhibit a higher on/off-current ratio with a lower RSD, but show severe degradation in their AC performance owing to a higher Cpara. Considering the trade-off between RSD and Cpara, optimal geometry-dependent κsp values at various supply voltages (VDD) are determined using gate delay (CV/I) and current-gain cutoff frequency (fT). We found that as LEXT and VDD decrease and Dnw increases, the optimal κsp value shifts from the high-κ to low-κ regime.

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