The lattice defects of beryl single crystals from Brazil and Madagascar have been studied by X‐ray topography. Two types of linear defects are observed: channels and grown‐in dislocations. Slip systems and Burgers‐vector moduli are determined. Some calculations of directions of minimum dislocation energy are given and they are in quite good agreement with the observations.
X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended structural defects in 6H-SiC bulky crystals. Topographs are taken by means of White Beam Synchrotron Radiation Source (WB-SRS-XRDT) and by means of monochromatic radiation (MoKα1) with conventional source (Lang method). All studied samples are characterised by the presence of linear defects, dislocations and microchannels, uniformly distributed in the crystal. Such defects draw a net of independent systems of parallel lines, with different orientation and different contrast widths. Micro-channels are parallel to the c axis, whereas dislocations are perpendicular or nearly parallel to the c axis. The last are unit screw dislocations. It has been concluded that the growth mechanism is driven by screw dislocations and that channels results from the coalescence of parallel dislocations.
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