For potential extreme ultraviolet (EUV) scintillator applications, aluminum (Al)‐doped zinc oxide (ZnO) thin films are successfully fabricated on glass and silicon substrates using spray pyrolysis technique. The Al‐doped thin films consist of 160‐nm‐sized flake‐like particles and have 0.30 μm thicknesses and up to 75% visible transmittances. Although Al doping affects the film morphology and optical properties in the visible region, both undoped and Al‐doped thin films exhibit hexagonal wurtzite crystal structures and intense 381 nm emissions with 20–30 ps lifetimes. With submicrometer thicknesses and intense picosecond UV emissions, the spray‐pyrolysis‐deposited Al‐doped ZnO thin films have promising potential as ultrafast scintillator materials which may lead to improved imaging and timing of EUV light sources.
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