A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate. We used a novel measurement approach and demonstrated for the first time frequency-independent performance of a CNT FET for frequencies as high as 23GHz. This observed maximum operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications.
A 1Mb (128kx8) EEPROM using SONOS (Silicon -Oxide -Nitride -Oxide -Silicon) technology has been designed and fabricated for radiation hardened space applications. To ensure reliable operation of flight units, the NGC W28C0108 128kx8 EEPROM has been exposed to an extensive set of environmental radiation testing. In addition, a detailed reliability study has been performed to determine memory retention activation energy, which is used to calculate a worst case retention lifetime for the part. The details of the radiation and reliability tests conducted, as well as the test results and conclusions, are presented in this paper.
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