Janus transition-metal dichalcogenides (TMDCs) are emerging as special 2D materials with different chalcogen atoms covalently bonded on each side of the unit cell, resulting in interesting properties. To date, several synthetic strategies have been developed to realize Janus TMDCs, which first involves stripping the top-layer S of MoS2 with H atoms. However, there has been little discussion on the intermediate Janus MoSH. It is critical to find the appropriate plasma treatment time to avoid sample damage. A thorough understanding of the formation and properties of MoSH is highly desirable. In this work, a controlled H2-plasma treatment has been developed to gradually synthesize a Janus MoSH monolayer, which was confirmed by the TOF-SIMS analysis as well as the subsequent fabrication of MoSSe. The electronic properties of MoSH, including the high intrinsic carrier concentration (∼2 × 1013 cm–2) and the Fermi level (∼ – 4.11 eV), have been systematically investigated by the combination of FET device study, KPFM, and DFT calculations. The results demonstrate a method for the creation of Janus MoSH and present the essential electronic parameters which have great significance for device applications. Furthermore, owing to the metallicity, 2D Janus MoSH might be a potential platform to observe the SPR behavior in the mid-infrared region.
This reported study investigated the use of agglomerates fabricated from different-sized Ag truncated nanotriangles in highly sensitive surface enhanced Raman scattering (SERS) by employing Rhodamine 6G dye as the probe molecule. It was found that the SERS intensity of R6G was enhanced as the size of the Ag truncated nanotriangles increased. It was postulated that this phenomenon resulted from the generated hot spots and the roughness of the surface of the agglomerates. In addition, the results exhibited an independent feature on the surface plasmon resonance position. The experimental results showed that the prepared SERS substrate was able to detect R6G over a wide concentration range of 10 -5 -10 -11 M and could be used as an effective SERS substrate in trace detection.
The development of inkjet-printed 2D crystal inks offers the ability to print different 2D materials on various substrates to form vertical heterostructures. However, the detailed characterization of the atomic structures of the inkjet-printed MoTe2 nanosheets has been rarely reported. In this work, water-based 2D crystal inks of MoTe2, WS2, and graphene have been prepared and printed to obtain the flexible photodetectors. The absorption coefficient of MoTe2 has been estimated as α (500 nm) = 925 ± 47 lg−1 m−1 using the gravimetric method. Intriguingly, the inkjet-printed MoTe2 nanosheets down to 4 nm show both the semiconducting 2H and metallic 1T′ phases. The responsivities of the photodetectors based on MoTe2/graphene and WS2/graphene heterostructures can reach 120 mA/W and 2.5 A/W at 532 nm, respectively. Moreover, the inkjet-printed MoTe2/graphene shows a responsivity of 7.7 mA/W at 940 nm. The fabrication technique of inkjet printing will help design flexible optoelectronic devices based transition metal dichalcogenide–graphene heterostructures for the near-infrared photo detection.
Chemical vapor deposition (CVD) is a promising method to obtain monolayer transition metal dichalcogenides (TMDCs) with high quality and enough size to meet the requirements of practical photoelectric devices. However, the as-grown monolayers often exhibit a lower PL performance due to the stress between the as-grown TMDCs flakes and the substrate. Therefore, finding a facile method to effectively promote the photoluminescence quantum yield (PL QY) of CVD monolayer TMDCs with a clean surface is highly desirable for practical applications. In this work, based on the CVD monolayers MoS2 and MoSe2, the effect of various stress relaxation methods on the TMDCs PL enhancement is systemically studied. By comparing the different kinds of volatile solution treatment processes, as well as the traditional transfer process, it can be found that the volatile solution with a moderate volatilization rate such as ethanol or IPA is a preferred option to improve the PL performance of the CVD monolayer TMDCs, which also surpasses the traditional transfer method by avoiding wrinkles, defects, and contamination to the samples. PL QY of ethanol-treated CVD samples could increase by 6 times on average. Significantly, PL QY of CVD MoSe2 treated by ethanol can reach ∼16%, which is at the forefront of the previous reports of 2D MoSe2. Our study demonstrated an optimized method to enhance the PL QY of CVD monolayer TMDCs, which would facilitate TMDCs optoelectronics.
Supercapacitors have been extensively studied due to their advantages of fast-charging and discharging, high-power density, long-cycling life, low cost, etc. Exploring novel nanomaterial schemes for high-performance electrode materials is of great significance. Herein, a strategy to combine vertical graphene (VG) with MoO3 nanosheets to form a composite VG/MoO3 nanostructure is proposed. VGs as transition layers supply rich active sites for the growth of MoO3 nanosheets with increasing specific surface areas. The VG transition layer further improves the electric contact and adhesion of the MoO3 electrode, simultaneously stabilizing its volume and crystal structure during repeated redox reactions. Thus, the prepared VG/MoO3 nanosheets have been demonstrated to exhibit excellent electrochemical properties, such as high reversible capacitance, better cycling performance, and high-rate capability.
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