The electronic band structure and carrier density of strained armchair graphene nanoribbons (AGNRs) with widths of n =3 m and n =3 m +1 were examined using tight-binding approximation. The current-voltage (I-V) model of uniaxial strained n =3 m AGNRs incorporating quantum confinement effects is also presented in this paper. The derivation originates from energy dispersion throughout the entire Brillouin zone of uniaxial strained AGNRs based on a tight-binding approximation. Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain. Unlike the two-dimensional graphene, whose bandgap remains near to zero even when a large strain is applied, the bandgap and carrier density of AGNRs are shown to be sensitive to the magnitude of uniaxial strain. Discrepancies between the classical calculation and quantum calculation were also measured. It has been found that as much as 19% of the drive current loss is due to the quantum confinement. These analytical models which agree well with the experimental and numerical results provide physical insights into the characterizations of uniaxial strained AGNRs.
The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.
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